Invention Grant
- Patent Title: Reflective mask useful for transferring a pattern using extreme ultraviolet (EUV) radiation and method of making the same
- Patent Title (中): 用于使用极紫外（EUV）辐射转印图案的反射罩及其制造方法
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Application No.: US10290693Application Date: 2002-11-08
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Publication No.: US06986971B2Publication Date: 2006-01-17
- Inventor: Sang-In Han , Scott Daniel Hector , Pawitter J. S. Mangat
- Applicant: Sang-In Han , Scott Daniel Hector , Pawitter J. S. Mangat
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Kim-Marie Vo; Patricia S. Goddard
- Main IPC: G01F9/00
- IPC: G01F9/00
Abstract:
An EUV mask (10) includes an opening (26) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. An etch stop layer (20) may be provided between a lower multilayer reflective stack (14) and an upper multilayer reflective stack (22) to ensure an appropriate and accurate depth of the opening. An absorber layer (32) may be deposited within the opening to sufficiently reduce the amount of reflection within dark region (30). Optimal thicknesses and locations of the various layers are described.
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