发明授权
- 专利标题： Method for fabricating semiconductor optical device
- 专利标题（中）： 制造半导体光学器件的方法
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申请号： US10800680申请日： 2004-03-16
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公开(公告)号： US06989312B2公开(公告)日： 2006-01-24
- 发明人: Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
- 申请人： Hyun Woo Song , Won Seok Han , Jong Hee Kim , Young Gu Ju , O Kyun Kwon , Sang Hee Park
- 申请人地址： KR Daejon-Shi
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejon-Shi
- 代理机构： Mayer, Brown, Rowe & Maw LLP
- 优先权： KR10-2003-0085359 20031128
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.
公开/授权文献
- US20050118741A1 Method for fabricating semiconductor optical device 公开/授权日：2005-06-02
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