- 专利标题： Semiconductor device and method for manufacturing
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申请号： US10406281申请日： 2003-04-04
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公开(公告)号： US06989316B2公开(公告)日： 2006-01-24
- 发明人: Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
- 申请人： Kyoichi Suguro , Kiyotaka Miyano , Ichiro Mizushima , Yoshitaka Tsunashima , Takayuki Hiraoka , Yasushi Akasaka , Tsunetoshi Arikado
- 申请人地址： JP Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP11-187053 19990630; JP11-263742 19990917
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
In using an epitaxial growth method to selectively grow on a silicon substrate an epitaxial layer on which an element is to be formed, the epitaxial layer is formed so as to extend upward above a thermal oxide film that is an element isolating insulating film, in order to prevent formation of facets. Subsequently, unwanted portions of the epitaxial layer are removed by means of CMP to complete an STI element isolating structure.
公开/授权文献
- US20030211713A1 Semiconductor device and method for manufacturing 公开/授权日：2003-11-13
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