发明授权
- 专利标题： Silicon oxide gap-filling process
- 专利标题（中）： 氧化硅间隙填充工艺
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申请号： US10605478申请日： 2003-10-02
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公开(公告)号： US06989337B2公开(公告)日： 2006-01-24
- 发明人: Hsiu-Chuan Chu , Chih-An Huang , Teng-Chun Tsai , Neng-Kuo Chen
- 申请人： Hsiu-Chuan Chu , Chih-An Huang , Teng-Chun Tsai , Neng-Kuo Chen
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectric Corp.
- 当前专利权人： United Microelectric Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.
公开/授权文献
- US20050074946A1 [SILICON OXIDE GAP-FILLING PROCESS] 公开/授权日：2005-04-07
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