Invention Grant
- Patent Title: One-level zero-current-state exclusive or (XOR) gate
- Patent Title (中): 一级零电流状态异或(XOR)门
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Application No.: US11057968Application Date: 2005-02-15
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Publication No.: US06989715B2Publication Date: 2006-01-24
- Inventor: Guangming Yin
- Applicant: Guangming Yin
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
Aspects of the invention provide a fast one level zero-current-state XOR gate. An embodiment of the invention provides a first pair of differentially configured transistors and a level shifting resistor coupled to the first pair of differentially configured transistors. The one level zero-current-state XOR gate may also include a second pair of differentially configured transistors. A core of the XOR gate may be coupled to outputs of the first and the second pairs of differentially configured transistors.
Public/Granted literature
- US20050134310A1 One-level zero-current-state exclusive or (XOR) gate Public/Granted day:2005-06-23
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