发明授权
- 专利标题： Magnetic memory device
- 专利标题（中）： 磁存储器件
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申请号： US10680464申请日： 2003-10-07
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公开(公告)号： US06990012B2公开(公告)日： 2006-01-24
- 发明人: Kenneth Kay Smith , Frederick A. Perner
- 申请人： Kenneth Kay Smith , Frederick A. Perner
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The present invention provides a magnetic memory. In one embodiment, the magnetic memory includes a first line having a first cross-sectional area. A second line is provided having a second cross-sectional area different from the first cross-sectional area. A magnetic memory cell stack is positioned between the first line and the second line.
公开/授权文献
- US20050073880A1 Magnetic memory device 公开/授权日：2005-04-07
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