发明授权
US06990134B2 GaN series surface-emitting laser diode having spacer for effective diffusion of holes between P-type electrode and active layer, and method for manufacturing the same
有权
具有用于P型电极和有源层之间的孔的有效扩散的间隔物的GaN系列表面发射激光二极管及其制造方法
- 专利标题: GaN series surface-emitting laser diode having spacer for effective diffusion of holes between P-type electrode and active layer, and method for manufacturing the same
- 专利标题(中): 具有用于P型电极和有源层之间的孔的有效扩散的间隔物的GaN系列表面发射激光二极管及其制造方法
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申请号: US10816822申请日: 2004-04-05
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公开(公告)号: US06990134B2公开(公告)日: 2006-01-24
- 发明人: Yong-jo Park , Kyoung-ho Ha , Heon-su Jeon , Si-hyun Park
- 申请人: Yong-jo Park , Kyoung-ho Ha , Heon-su Jeon , Si-hyun Park
- 申请人地址: KR Suwon
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Buchanan Ingersoll PC
- 优先权: KR2001-5065 20010202
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A GaN series surface-emitting laser diode and a method for manufacturing the same are provided. The GaN series surface-emitting laser diode includes: an active layer; p-type and n-type material layers on the opposite sides of the active layer; a first-distributed Bragg reflector (DBR) layer formed on the n-type material layer; an n-type electrode connected to the active layer through the n-type material layer such that voltage is applied to the active layer for lasing; a spacer formed on the p-type material layer with a laser output window in a portion aligned with the first DBR layer, the spacer being thick enough to enable holes to effectively migrate to a center portion of the active layer; a second DBR layer formed on the laser output window; and a p-type electrode connected to the active layer through the p-type material layer such that voltage is applied to the active layer for lasing. The laser output window is shaped such that diffraction of a laser beam caused by the formation of the spacer can be compensated for.