发明授权
- 专利标题： Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials
- 专利标题（中）： 由选自半导体材料的材料层形成的多层晶片的表面处理
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申请号： US10915769申请日： 2004-08-10
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公开(公告)号： US06991944B2公开(公告)日： 2006-01-31
- 发明人: Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
- 申请人： Olivier Rayssac , Beryl Blondeau , Hubert Moriceau , Christelle Lagahe-Blanchard , Franck Fournel
- 申请人地址： FR Bernin FR Paris
- 专利权人： S.O.I.Tec Silicon on Insulation Technologies S.A.,Commissariat à l'Energie Atomique (CEA)
- 当前专利权人： S.O.I.Tec Silicon on Insulation Technologies S.A.,Commissariat à l'Energie Atomique (CEA)
- 当前专利权人地址： FR Bernin FR Paris
- 代理机构： Winston & Strawn LLP
- 优先权： FR0314463 20031210
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
This invention relates to a process for treatment of a multi-layer wafer with materials having differential thermal characteristics, the process comprising a high temperature heat treatment step that can generate secondary defects, characterised in that this process includes a wafer surface preparation step before the high temperature heat treatment step.