发明授权
US06992309B1 Ion beam measurement systems and methods for ion implant dose and uniformity control 有权
离子束测量系统和离子注入剂量和均匀性控制方法

Ion beam measurement systems and methods for ion implant dose and uniformity control
摘要:
Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.
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