发明授权
US06992320B2 Semiconductor optical device with quantum dots having internal tensile or compressive strain
有权
具有内部拉伸或压缩应变的量子点的半导体光学器件
- 专利标题： Semiconductor optical device with quantum dots having internal tensile or compressive strain
- 专利标题（中）： 具有内部拉伸或压缩应变的量子点的半导体光学器件
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申请号： US10644803申请日： 2003-08-21
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公开(公告)号： US06992320B2公开(公告)日： 2006-01-31
- 发明人: Hiroji Ebe , Yoshiaki Nakata , Tomoyuki Akiyama
- 申请人： Hiroji Ebe , Yoshiaki Nakata , Tomoyuki Akiyama
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- 优先权： JP2002-246175 20020827
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00 ; H01L29/06 ; H01L31/0328 ; H01L31/0336
摘要：
A semiconductor optical device having a substrate having a surface of a first semiconductor having a first lattice constant; and a semiconductor lamination layer formed on the substrate, the semiconductor lamination layer having an active layer which contains quantum dots of a first kind made of a second semiconductor having a second lattice constant in bulk state smaller than the first lattice constant. The active layer may contain quantum dots of a second kind made of a third semiconductor having a third lattice constant in bulk state larger than the first lattice constant. The quantum dots of the first and second kinds are preferably disposed alternately along the thickness direction between the barrier layers having the first lattice constant.
公开/授权文献
- US20040041145A1 Semiconductor optical device with quantum dots 公开/授权日：2004-03-04
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