发明授权
- 专利标题: Semiconductor device and method for fabricating the same
- 专利标题(中): 半导体装置及其制造方法
-
申请号: US10649741申请日: 2003-08-28
-
公开(公告)号: US06992396B2公开(公告)日: 2006-01-31
- 发明人: Yoshiyuki Arai , Takashi Yui , Yoshiaki Takeoka , Fumito Itou , Yasutake Yaguchi
- 申请人: Yoshiyuki Arai , Takashi Yui , Yoshiaki Takeoka , Fumito Itou , Yasutake Yaguchi
- 申请人地址: JP Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2002-381135 20021227
- 主分类号: H01L29/40
- IPC分类号: H01L29/40
摘要:
A semiconductor device has a substrate having electrode pads, a first semiconductor chip mounted on the substrate with a first adhesion layer interposed therebetween, a second semiconductor chip mounted on the first semiconductor chip with a second adhesion layer interposed therebetween and having electrode pads on the upper surface thereof, wires for bonding the electrode pads of the substrate and the electrode pads of the second semiconductor chip to each other, and a mold resin sealing therein the first and second semiconductor chips and the wires. The peripheral edge portion of the first adhesion layer is protruding outwardly from the first semiconductor chip and the peripheral edge portion of the second semiconductor chip is protruding outwardly beyond the peripheral edge portion of the first semiconductor chip.
公开/授权文献
- US20040126926A1 Semiconductor device and method for fabricating the same 公开/授权日:2004-07-01
信息查询
IPC分类: