发明授权
US06994805B2 Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer 失效
具有高电荷载流子迁移率的聚噻吩聚合物,制备聚合物的方法,以及包含聚合物的半导体组分和有机场效应晶体管

  • 专利标题: Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer
  • 专利标题(中): 具有高电荷载流子迁移率的聚噻吩聚合物,制备聚合物的方法,以及包含聚合物的半导体组分和有机场效应晶体管
  • 申请号: US10281807
    申请日: 2002-10-28
  • 公开(公告)号: US06994805B2
    公开(公告)日: 2006-02-07
  • 发明人: Marcus HalikGünter Schmid
  • 申请人: Marcus HalikGünter Schmid
  • 申请人地址: DE Munich
  • 专利权人: Infineon Technologies AG
  • 当前专利权人: Infineon Technologies AG
  • 当前专利权人地址: DE Munich
  • 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
  • 优先权: DE10152939 20011026
  • 主分类号: H01B1/12
  • IPC分类号: H01B1/12
Polythiophene polymer with high charge-carrier mobilities, method for fabricating the polymer, and semiconductor component and organic field effect transistor including the polymer
摘要:
A polythiophene polymer with high charge-carrier mobilities, a method for fabricating the polymer, and a semiconductor component and an organic field effect transistor including the polymer are provided. The polymer has electrical semiconductor characteristics and includes a backbone formed from thiophene groups. The thiophene groups carry a side group in the 3rd and 4th positions that can itself have semiconductor characteristics. The polymers have a high mobility of the charge carriers and are therefore suitable for fabricating electronic components such as field effect transistors.
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