The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a β-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate 19.