发明授权
- 专利标题： Non-volatile ferroelectric SRAM
- 专利标题（中）： 非易失性铁电SRAM
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申请号： US10961429申请日： 2004-10-07
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公开(公告)号： US06996000B2公开(公告)日： 2006-02-07
- 发明人: Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
- 申请人： Zheng Chen , Carlos A. Paz de Araujo , Larry D. McMillan
- 申请人地址： US CO Colorado Springs JP Osaka
- 专利权人： Symetrix Corporation,Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Symetrix Corporation,Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： US CO Colorado Springs JP Osaka
- 代理机构： Patton Booge LLP
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A non-volatile SRAM memory comprising a plurality of memory cells, each memory cell including a SRAM memory cell portion and a ferroelectric memory cell portion including a ferroelectric element, the ferroelectric memory cell portion including a switch system for permitting the ferroelectric element to be isolated from the ferroelectric elements in all other memory cells.
公开/授权文献
- US20050073876A1 Non-volatile ferroelectric SRAM 公开/授权日：2005-04-07
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