发明授权
- 专利标题: Alternating phase mask built by additive film deposition
- 专利标题(中): 通过添加膜沉积建立的交替相位掩模
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申请号: US10707009申请日: 2003-11-13
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公开(公告)号: US06998204B2公开(公告)日: 2006-02-14
- 发明人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Peter H. Mitchell , Larry A. Nesbit
- 申请人: Toshiharu Furukawa , Mark C. Hakey , Steven J. Holmes , David V. Horak , Charles W. Koburger, III , Peter H. Mitchell , Larry A. Nesbit
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb I.P. Law Firm, LLC
- 代理商 Todd M.C. Li, Esq.
- 主分类号: G01F9/00
- IPC分类号: G01F9/00
摘要:
The invention provides a method of forming a phase shift mask and the resulting phase shift mask. The method forms a non-transparent film on a transparent substrate and patterns an etch stop layer on the non-transparent film. The invention patterns the non-transparent film using the etch stop layer to expose areas of the transparent substrate. Next, the invention forms a mask on the non-transparent film to protect selected areas of the transparent substrate and forms a phase shift oxide on exposed areas of the transparent substrate. Subsequently, the mask is removed and the phase shift oxide is polished down to the etch stop layer, after which the etch stop layer is removed.
公开/授权文献
- US20050106472A1 ALTERNATING PHASE MASK BUILT BY ADDITIVE FILM DEPOSITION 公开/授权日:2005-05-19