发明授权
US06998303B2 Manufacture method for semiconductor device with patterned film of ZrO2 or the like
有权
具有ZrO2等图案化膜的半导体器件的制造方法
- 专利标题： Manufacture method for semiconductor device with patterned film of ZrO2 or the like
- 专利标题（中）： 具有ZrO2等图案化膜的半导体器件的制造方法
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申请号： US10633534申请日： 2003-08-05
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公开(公告)号： US06998303B2公开(公告)日： 2006-02-14
- 发明人: Yoshihiro Sugita , Yusuke Morisaki , Kiyoshi Irino , Shiqin Xiao , Takayuki Ohba
- 申请人： Yoshihiro Sugita , Yusuke Morisaki , Kiyoshi Irino , Shiqin Xiao , Takayuki Ohba
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2002-231786 20020808
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.