发明授权
US06998332B2 Method of independent P and N gate length control of FET device made by sidewall image transfer technique
失效
由侧壁图像传输技术制造的FET器件的独立P和N栅极长度控制方法
- 专利标题: Method of independent P and N gate length control of FET device made by sidewall image transfer technique
- 专利标题(中): 由侧壁图像传输技术制造的FET器件的独立P和N栅极长度控制方法
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申请号: US10754073申请日: 2004-01-08
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公开(公告)号: US06998332B2公开(公告)日: 2006-02-14
- 发明人: Toshiharu Furukawa , Steven J. Holmes , William H-L Ma
- 申请人: Toshiharu Furukawa , Steven J. Holmes , William H-L Ma
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Gibb I.P. Law Firm, LLC
- 代理商 Ira D. Blecker, Esq.
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205 ; H01L21/4763
摘要:
Disclosed is a method that forms a conductive layer on a substrate and patterns sacrificial structures above the conductive layer. Next, the invention forms sidewall spacers adjacent the sacrificial structures using a spacer material capable of undergoing dimensional change, after which the invention removes the sacrificial structures in processing that leaves the sidewall spacers in place. The invention then protects selected ones of the sidewall spacers using a sacrificial mask and leaves the other ones of the sidewall spacers unprotected. This allows the invention to selectively expose the unprotected sidewall spacers to processing that changes the size of the unprotected sidewall spacers. This causes the unprotected sidewall spacers have a different size than protected sidewall spacers. Then, the invention removes the sacrificial mask and patterns the conductive layer using the sidewall spacers as a gate conductor mask to create differently sized gate conductors on the substrate. Following this, the invention removes the sidewall spacers and forms the source, drain, and channel regions adjacent the gate conductors.