发明授权
- 专利标题: Voltage controlled variable capacitance device
- 专利标题(中): 电压可变电容器件
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申请号: US10767105申请日: 2004-01-29
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公开(公告)号: US06999296B2公开(公告)日: 2006-02-14
- 发明人: Susumu Kurosawa , Yuki Fujimoto
- 申请人: Susumu Kurosawa , Yuki Fujimoto
- 申请人地址: JP Kanagawa
- 专利权人: NEC Electronics Corporation
- 当前专利权人: NEC Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 优先权: JP2003-024935 20030131
- 主分类号: H01G5/01
- IPC分类号: H01G5/01 ; H01G7/00
摘要:
A P type substrate is provided on a surface thereof with varactor elements. The varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film is formed on the N well, with a polysilicon layer formed further thereon. On the other hand, the varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film, greater than the gate insulating film in thickness, is formed on the N well. The polysilicon layer is then formed on the gate insulating film. Furthermore, the polysilicon layer is connected to a gate terminal, while the N well is connected to an S/D terminal via N+ diffusion layers.
公开/授权文献
- US20040184216A1 Voltage controlled variable capacitance device 公开/授权日:2004-09-23