- 专利标题: Material for contact etch layer to enhance device performance
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申请号: US10835949申请日: 2004-04-30
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公开(公告)号: US07001844B2公开(公告)日: 2006-02-21
- 发明人: Ashima B. Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya N. Chakravarti
- 申请人: Ashima B. Chakravarti , Shreesh Narasimha , Victor Chan , Judson Holt , Satya N. Chakravarti
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Whitham, Curtis & Christofferson, P.C.
- 代理商 Jay H. Anderson
- 主分类号: H01L21/469
- IPC分类号: H01L21/469
摘要:
Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3 can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.