发明授权
- 专利标题: Ultra-thin body super-steep retrograde well (SSRW) FET devices
- 专利标题(中): 超薄体超陡逆行井(SSRW)FET器件
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申请号: US10710736申请日: 2004-07-30
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公开(公告)号: US07002214B1公开(公告)日: 2006-02-21
- 发明人: Diane C. Boyd , Judson R. Holt , MeiKei Ieong , Renee T. Mo , Zhibin Ren , Ghavam G. Shahidi
- 申请人: Diane C. Boyd , Judson R. Holt , MeiKei Ieong , Renee T. Mo , Zhibin Ren , Ghavam G. Shahidi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Graham S. Jones, II; H. Daniel Schnurmann
- 主分类号: H01L27/12
- IPC分类号: H01L27/12
摘要:
A method of manufacture of a Super Steep Retrograde Well Field Effect Transistor device starts with an SOI layer formed on a substrate, e.g. a buried oxide layer. Thin the SOI layer to form an ultra-thin SOI layer. Form an isolation trench separating the SOI layer into N and P ground plane regions. Dope the N and P ground plane regions formed from the SOI layer with high levels of N-type and P-type dopant. Form semiconductor channel regions above the N and P ground plane regions. Form FET source and drain regions and gate electrode stacks above the channel regions. Optionally form a diffusion retarding layer between the SOI ground plane regions and the channel regions.