A system and methodology for testing memory in an integrated circuit implementing BIST testing to calculate row and column redundancy and enable replacement of a defective row or column of memory cells. The system comprises circuitry for detecting a first single memory cell failure in a row; and, recording the I/O value of the first Single Cell Fail (SCF). A circuit is provided for detecting whether more than one single cell failure has occurred for a tested row, and, in response to detecting a second SCF, comparing recorded I/O value of the subsequent tested row, with the I/O value associated with the first failed memory cell. Upon detection of defective bits, the defective column and row of memory having corresponding defective bits set is replaced.