发明授权
US07005360B2 Method for fabricating a microelectronic circuit including applying metal over and thickening the integrated coil to increase conductivity
有权
一种制造微电子电路的方法，包括将金属涂覆在一起并增厚集成线圈以增加导电性
- 专利标题： Method for fabricating a microelectronic circuit including applying metal over and thickening the integrated coil to increase conductivity
- 专利标题（中）： 一种制造微电子电路的方法，包括将金属涂覆在一起并增厚集成线圈以增加导电性
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申请号： US10381406申请日： 2001-10-04
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公开(公告)号： US07005360B2公开(公告)日： 2006-02-28
- 发明人: Christl Lauterbach , Christian Paulus
- 申请人： Christl Lauterbach , Christian Paulus
- 申请人地址： DE
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE
- 代理机构： Altera Law Group, LLC
- 代理商 Jeffrey R. Stone
- 优先权： DE10048960 20001004
- 国际申请： PCT/DE01/03792 WO 20011004
- 国际公布： WO02/29863 WO 20020411
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/4763
摘要：
A method for fabricating a microelectronic circuit having an improved electrically conductive element. The method includes providing a finished processed microelectronic circuit having a monolithically integrated coil and having a passivation layer situated above at least the monolithically integrated coil. The method further comprises removing at least part of the passivation layer above the monolithically integrated coil and applying a metal layer above the monolithically integrated coil so that the metal layer is electrically coupled to the monolithically integrated coil.
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