发明授权
- 专利标题： Conductor line stack having a top portion of a second layer that is smaller than the bottom portion
- 专利标题（中）： 导体线堆叠具有小于底部的第二层的顶部
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申请号： US10605308申请日： 2003-09-22
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公开(公告)号： US07005744B2公开(公告)日： 2006-02-28
- 发明人: Xiangdong Chen , Li Wang
- 申请人： Xiangdong Chen , Li Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L29/41
- IPC分类号： H01L29/41 ; H01L29/49
摘要：
A structure and method are provided for a conductor line stack of an integrated circuit. The conductor line stack includes a layer of a first material such as heavily doped polysilicon or a metal silicide. A layer of a second material such as a metal is formed over the layer of first material, the layer of second material having an upper portion and a lower portion. A pair of first spacers is disposed on sidewalls of the upper portion, wherein the lower portion has width defined by a combined width of the upper portion and the pair of first spacers. A pair of second spacers is formed on sidewalls of the first spacers, the lower portion and the layer of first material. The conductor line stack structure is well adapted for formation of a borderless bitline contact in contact therewith.
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