发明授权
- 专利标题： Semiconductor device with a cavity therein and a method of manufacturing the same
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申请号： US10665614申请日： 2003-09-19
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公开(公告)号： US07009273B2公开(公告)日： 2006-03-07
- 发明人: Kazumi Inoh , Hidemi Ishiuchi , Satoshi Matsuda , Ichiro Mizushima , Tsutomu Sato
- 申请人： Kazumi Inoh , Hidemi Ishiuchi , Satoshi Matsuda , Ichiro Mizushima , Tsutomu Sato
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Frommer Lawrence & Haug LLP
- 优先权： JP2002-273409 20020919
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
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