发明授权
- 专利标题： Sense amplifying magnetic tunnel device
- 专利标题（中）： 感应放大磁隧道装置
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申请号： US10855042申请日： 2004-05-27
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公开(公告)号： US07009903B2公开(公告)日： 2006-03-07
- 发明人: Fredrick A. Perner , Manish Sharma
- 申请人： Fredrick A. Perner , Manish Sharma
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.
公开/授权文献
- US20050276097A1 Sense amplifying magnetic tunnel device 公开/授权日：2005-12-15
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