An active-radiation-curing liquid crystalline composition is applied to an alignment layer 2 formed on a base 1, and the liquid crystal alignment is regulated by the application of heat or the like, thereby forming a liquid crystal layer 3 having cholesteric regularity (FIG. 1(a)). Next, active radiation 4 with a predetermined radiant intensity is applied to the liquid crystal layer 3 through a photomask 10 (FIG. 1(b)), and this liquid crystal layer 3 is then brought into contact with a solvent 5 (FIG. 1(c)). As a result, the area 3b in the liquid crystal layer 3 not irradiated with the active radiation 4 is removed, while the area 3a in the liquid crystal layer 3 irradiated with the active radiation 4 remains; a semi-cured cholesteric layer 3′ having therein a predetermined pattern is thus formed (FIG. 1(d)). Thereafter, active radiation 6 is applied to the surface of the semi-cured cholesteric layer 3′ to form a curing rate gradient in the semi-cured cholesteric layer 3′ between the substrate 9 side surface and the surface opposite to it and cure, while retaining this curing rate gradient, the semi-cured cholesteric layer 3′ to broaden its selective reflection wave range (FIG. 1(e)). Lastly, the semi-cured cholesteric layer 3′ is cured by the application of active radiation 8 while retaining the cholesteric regularity which the semi-cured cholesteric layer 3′ has developed in the course of broadening of its selective reflection wave range, thereby obtaining a cured cholesteric layer 3″ (FIG. 1(f)).