发明授权
- 专利标题: Image sensor with p-type circuitry and n-type photosensor
- 专利标题(中): 具有p型电路和n型光电传感器的图像传感器
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申请号: US09648403申请日: 2000-08-24
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公开(公告)号: US07012645B1公开(公告)日: 2006-03-14
- 发明人: Richard H. Tsai
- 申请人: Richard H. Tsai
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Dickstein Shapiro Morin & Oshinsky LLP
- 主分类号: H04N3/16
- IPC分类号: H04N3/16
摘要:
A pixel sensor that provides image sensing under radiation or space environment is disclosed. The pixel sensor includes a readout circuit and a first reset circuit. The readout circuit converts optical image signals to electronic signals, and includes p-type transistors and an n-type photosensitive element. The first reset circuit is configured to provide a reset level for a pixel output, and also includes p-type transistors. The use of p-type transistors and n-type photosensitive element provides radiation hardness without any radiation protective enclosure.