发明授权
- 专利标题: Multi DFB laser diode
- 专利标题(中): 多DFB激光二极管
-
申请号: US10725822申请日: 2003-12-01
-
公开(公告)号: US07012945B2公开(公告)日: 2006-03-14
- 发明人: Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
- 申请人: Kyung-Hyun Park , Young-Ahn Leem , Dong-Churl Kim , Dae-Su Yee , Sung-Bock Kim , Yong-Soon Baek
- 申请人地址: KR
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR
- 代理机构: Blakely Sokoloff Taylor & Zafman
- 优先权: KR10-2002-0079599 20021213
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A multi DFB laser diode for generating spontaneous pulses comprises first and second DFB sections each of which has a substrate including a diffraction grating, an active layer formed on the substrate, a clad layer formed on the active layer and including a refraction varying layer, and an electrode formed on the active layer; and a phase tuning section including a substrate, an active layer formed on the substrate, a clad layer formed on the active layer, and an electrode isolated from the electrode of the first and second DFB sections. The refraction varying layer in the active layer of the first DFB section has a refractive index different from that of the refraction varying layer in the active layer of the second DFB section.
公开/授权文献
- US20040125845A1 Multi DFB laser diode 公开/授权日:2004-07-01
信息查询