发明授权
- 专利标题： Silicon on insulator substrate having improved thermal conductivity and method of its formation
- 专利标题（中）： 绝缘体上硅衬底具有改进的导热性及其形成方法
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申请号： US10658668申请日： 2003-09-09
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公开(公告)号： US07015078B1公开(公告)日： 2006-03-21
- 发明人: Qi Xiang , Jung-Suk Goo , James Pan
- 申请人： Qi Xiang , Jung-Suk Goo , James Pan
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generated by the devices. The SOI substrate may be formed by a bonding method. SOI MOSFET devices using the SOI substrate are also disclosed.
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