Invention Grant
- Patent Title: Quantum optical semiconductor device
- Patent Title (中): 量子光学半导体器件
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Application No.: US10662819Application Date: 2003-09-16
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Publication No.: US07015498B2Publication Date: 2006-03-21
- Inventor: Hiroji Ebe , Yoshiaki Nakata , Mitsuru Sugawara , Takashi Kita , Osamu Wada , Yasuhiko Arakawa
- Applicant: Hiroji Ebe , Yoshiaki Nakata , Mitsuru Sugawara , Takashi Kita , Osamu Wada , Yasuhiko Arakawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Armstrong, Kratz, Quintos, Hanson & Brooks, LLP
- Priority: JP2002-273178 20020919
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
Abstract:
A quantum semiconductor device including quantum dots formed by S-K growth process taking place in a heteroepitaxial system wherein the relationship between the energy level of light holes and the energy level of heavy holes in the valence band is changed by optimizing the in-plane strain and the vertical strain accumulated in a quantum dot.
Public/Granted literature
- US20040124409A1 Quantum optical semiconductor device Public/Granted day:2004-07-01
Information query
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