发明授权
- 专利标题: Memory device utilizing carbon nanotubes
- 专利标题(中): 使用碳纳米管的存储器件
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申请号: US10361024申请日: 2003-02-10
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公开(公告)号: US07015500B2公开(公告)日: 2006-03-21
- 发明人: Won-bong Choi , In-kyeong Yoo , Jae-uk Chu
- 申请人: Won-bong Choi , In-kyeong Yoo , Jae-uk Chu
- 申请人地址: KR Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon
- 代理机构: Lee & Morse, P.C.
- 优先权: KR2002-7709 20020209; KR10-2002-0071398 20021116
- 主分类号: H01B7/08
- IPC分类号: H01B7/08 ; H01L35/24
摘要:
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.