Invention Grant
US07016384B2 Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
失效
使用具有量子阱有源层的半导体激光元件的二次谐波发生器件，其中布置了谐振器长度和镜面损耗以增加增益峰值的宽度
- Patent Title: Second-harmonic generation device using semiconductor laser element having quantum-well active layer in which resonator length and mirror loss are arranged to increase width of gain peak
- Patent Title (中): 使用具有量子阱有源层的半导体激光元件的二次谐波发生器件，其中布置了谐振器长度和镜面损耗以增加增益峰值的宽度
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Application No.: US10386528Application Date: 2003-03-13
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Publication No.: US07016384B2Publication Date: 2006-03-21
- Inventor: Hideki Asano
- Applicant: Hideki Asano
- Applicant Address: JP Kanagawa-ken
- Assignee: Fuji Photo Film Co., Ltd.
- Current Assignee: Fuji Photo Film Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2002/069393 20020314; JP2002/072269 20020315; JP2002/081088 20020322
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/10 ; H01S3/13
Abstract:
A second-harmonic generation device includes a semiconductor laser element which has a quantum-well active layer, a wavelength control means which controls the wavelength of the light emitted from an end facet of the semiconductor laser element, an optical system which returns to the semiconductor laser element the light the wavelength of which is controlled by the wavelength control means, and a wavelength conversion element which is directly coupled to the other end facet of the semiconductor laser element, and converts the wavelength of the light controlled by the wavelength control means, to a half wavelength. The semiconductor laser element has a resonator length equal to or greater than 900 micrometers and a mirror loss equal to or greater than 16 cm−1.
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