- 专利标题: Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void
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申请号: US10862593申请日: 2004-06-07
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公开(公告)号: US07018550B2公开(公告)日: 2006-03-28
- 发明人: Richard D. Harris , Robert J. Kretschmann , Michael J. Knieser , Mark A. Lucak
- 申请人: Richard D. Harris , Robert J. Kretschmann , Michael J. Knieser , Mark A. Lucak
- 申请人地址: US OH Mayfield Heights
- 专利权人: Rockwell Automation Technologies, Inc.
- 当前专利权人: Rockwell Automation Technologies, Inc.
- 当前专利权人地址: US OH Mayfield Heights
- 代理机构: Quarles & Brady LLP
- 代理商 R. Scott Speroff
- 主分类号: C23F1/00
- IPC分类号: C23F1/00
摘要:
A method for fabricating an electrically isolated MEMS device having an outer stationary MEMS element and an inner movable MEMS element is provided that does not use a sacrificial layer. Rather, a pair of spacers are defined on the outer portions of the upper surface of a conductive wafer, and an insulating material is deposited thereon. The spacers are attached to a substrate to define an internal void therein. The wafer is then patterned to form the outer MEMS element as well as a conductive member for the inner MEMS element, separated from the outer MEMS element by a gap. A portion of the insulating layer that is disposed in the gap is then removed, thereby releasing the inner MEMS element from the stationary MEMS element.
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