发明授权
- 专利标题： Ramped soft programming for control of erase voltage distributions in flash memory devices
- 专利标题（中）： 用于控制闪存器件中擦除电压分布的斜坡软编程
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申请号： US10981833申请日： 2004-11-04
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公开(公告)号： US07020021B1公开(公告)日： 2006-03-28
- 发明人: Wing-Han Leung , Richard M. Fastow , Yue-Song He , Sheung-Hee Park
- 申请人： Wing-Han Leung , Richard M. Fastow , Yue-Song He , Sheung-Hee Park
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A method of erasing bits in a multi-level cell flash memory array is described. The method includes applying over-erase verification after each erase pulse. If cells verify as over-erased, a ramped over-erase correction pulse is applied. The voltage of each over-erase correction pulse is incrementally greater than the previous pulse, until all bits in all cells pass the over-erase verification. In this way, the widths of the threshold voltage distributions of the erased bits are kept to a minimum.
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