- 专利标题： Method for fabricating electronic device
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申请号： US10395182申请日： 2003-03-25
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公开(公告)号： US07022619B2公开(公告)日： 2006-04-04
- 发明人: Michinari Yamanaka , Hiroshi Yuasa , Tetsuo Satake , Etsuyoshi Kobori , Takeshi Yamashita , Susumu Matsumoto
- 申请人： Michinari Yamanaka , Hiroshi Yuasa , Tetsuo Satake , Etsuyoshi Kobori , Takeshi Yamashita , Susumu Matsumoto
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2002-087883 20020327
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L21/4763
摘要：
After a hole is formed in a low dielectric constant film on a substrate, a protective film is formed on the wall surface of the hole or an electron acceptor is caused to be adsorbed by or implanted in the low dielectric constant film exposed at the wall surface of the hole. Otherwise, resist residue is left on the wall surface of the hole. Then, a resist pattern having an opening corresponding to a wire formation region including a region formed with the hole is formed by using a chemically amplified resist.
公开/授权文献
- US20030186537A1 Method for fabricating electronic device 公开/授权日：2003-10-02
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