发明授权
- 专利标题: Electron beam lithography method
- 专利标题(中): 电子束光刻法
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申请号: US10700626申请日: 2003-11-05
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公开(公告)号: US07026098B2公开(公告)日: 2006-04-11
- 发明人: Kazunori Komatsu , Toshihiro Usa
- 申请人: Kazunori Komatsu , Toshihiro Usa
- 申请人地址: JP Kanagawa-ken
- 专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2002-322543 20021106
- 主分类号: G03C5/00
- IPC分类号: G03C5/00 ; G11B5/82
摘要:
An electron beam lithography method for performing lithography of elements included in a pattern by scanning a disk having resist coated thereon, placed on a rotating stage which is movable in a radial direction of the disk, with an electron beam while rotating the rotating stage. The electron beam has a beam diameter smaller than a minimum width of an element shape. The electron beam is reciprocally oscillated in a circumferential direction X approximately orthogonal to a radial direction Y of the disk and deflected in the radial direction Y, thereby filling in the element shape. Lithography of the elements is sequentially performed by rotating the disk unidirectionally, and thus a desired micropattern is drawn in the entire region of the disk. A lithographic length L of the element in the circumferential direction X may be defined by amplitude of the reciprocal oscillation of the electron beam.
公开/授权文献
- US20040091817A1 Electron beam lithography method 公开/授权日:2004-05-13
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