发明授权
- 专利标题： Dual-damascene process and associated floating metal structures
- 专利标题（中）： 双镶嵌工艺和相关的浮动金属结构
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申请号： US10072164申请日： 2002-02-07
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公开(公告)号： US07026235B1公开(公告)日： 2006-04-11
- 发明人: Mira Ben-Tzur , Krishnaswamy Ramkumar
- 申请人： Mira Ben-Tzur , Krishnaswamy Ramkumar
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 代理机构： Okamoto & Benedicto LLP
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763
摘要：
In one embodiment, an interconnect line on one level of an integrated circuit is electrically coupled to another interconnect line on another level. The two layers of interconnects may be coupled together using a via. To reduce capacitance between the interconnect lines, an air core is formed between them. The air core may be formed by using a chemistry that includes a noble gas fluoride to etch a sacrificial layer between the interconnect layers.
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