- 专利标题: Plasma producing apparatus and doping apparatus
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申请号: US10390882申请日: 2003-03-19
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公开(公告)号: US07026764B2公开(公告)日: 2006-04-11
- 发明人: Osamu Nakamura
- 申请人: Osamu Nakamura
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Nixon Peabody LLP
- 代理商 Jeffrey L. Costelli
- 优先权: JP2002-087233 20020326
- 主分类号: H01J7/24
- IPC分类号: H01J7/24
摘要:
An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.
公开/授权文献
- US20030184235A1 Plasma producing apparatus and doping apparatus 公开/授权日:2003-10-02
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