Invention Grant
- Patent Title: Embedded bi-layer structure for attenuated phase shifting mask
- Patent Title (中): 用于衰减相移掩模的嵌入式双层结构
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Application No.: US10462359Application Date: 2003-06-16
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Publication No.: US07029802B2Publication Date: 2006-04-18
- Inventor: Cheng-ming Lin
- Applicant: Cheng-ming Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G03F9/00
- IPC: G03F9/00
Abstract:
An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.
Public/Granted literature
- US20040253523A1 Embedded bi-layer structure for attenuated phase shifting mask Public/Granted day:2004-12-16
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