发明授权
- 专利标题： Method for SONOS EFLASH integrated circuit
- 专利标题（中）： SONOS EFLASH集成电路方法
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申请号： US11041051申请日： 2005-01-21
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公开(公告)号： US07029976B1公开(公告)日： 2006-04-18
- 发明人: Sripad Sheshagiri Nagarad , Dong Kyun Sohn , Yoke Leng Louis Lim , Siow Lee Chwa , Hsiang Fang Lim
- 申请人： Sripad Sheshagiri Nagarad , Dong Kyun Sohn , Yoke Leng Louis Lim , Siow Lee Chwa , Hsiang Fang Lim
- 申请人地址： SG Singapore
- 专利权人： Chartered Semiconductor Manufacturing. LTD
- 当前专利权人： Chartered Semiconductor Manufacturing. LTD
- 当前专利权人地址： SG Singapore
- 代理商 William J. Stoffel
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247
摘要：
A method of manufacturing a charge storage layer for a SONOS memory device. A feature of the embodiment is the first gate layer is formed over the charge storing layer (ONO) before the charge storing layer is patterned. The first gate layer protects the charge storing layer (ONO) from various etches used in the process to pattern the various gate dielectric layers on other regions of substrate.
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