发明授权
- 专利标题： Semiconductor device having aluminum and metal electrodes and method for manufacturing the same
- 专利标题（中）： 具有铝和金属电极的半导体器件及其制造方法
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申请号： US10878435申请日： 2004-06-29
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公开(公告)号： US07030496B2公开(公告)日： 2006-04-18
- 发明人: Keiji Shinyama , Shoji Miura , Ichiharu Kondo
- 申请人： Keiji Shinyama , Shoji Miura , Ichiharu Kondo
- 申请人地址： JP Kariya
- 专利权人： Denso Corporation
- 当前专利权人： Denso Corporation
- 当前专利权人地址： JP Kariya
- 代理机构： Posz Law Group, PLC
- 优先权： JP2003-273456 20030711
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.
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