A protection circuit, to be provided for a circuit arrangement having an inductive load and an FET as an N-channel MOS transistor provided upstream of the load with respect to a flow of power current, the FET controlling an energization state of the load, the protection circuit includes a first connection changer interposed on a connection line between a gate of the FET and a gate drive voltage supply source, the first connection changer changing a connection state between a first connection state in which the gate is connected to the gate drive voltage supply and a second connection state in which the gate is connected to a ground.