发明授权
- 专利标题: Method of fabricating sub-micron structures in transparent dielectric materials
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申请号: US10431442申请日: 2003-05-08
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公开(公告)号: US07033519B2公开(公告)日: 2006-04-25
- 发明人: Rod Taylor , Cyril Hnatovsky , Paul Corkum , David Rayner , Ravi Bhardwaj
- 申请人: Rod Taylor , Cyril Hnatovsky , Paul Corkum , David Rayner , Ravi Bhardwaj
- 申请人地址: CA Ottawa
- 专利权人: National Research Council of Canada
- 当前专利权人: National Research Council of Canada
- 当前专利权人地址: CA Ottawa
- 代理机构: Marks & Clerk
- 代理商 Richard J. Mitchell
- 主分类号: C03C25/68
- IPC分类号: C03C25/68
摘要:
A sub-micron structure is fabricated in a transparent dielectric material by focusing femtosecond laser pulses into the dielectric to create a highly tapered modified zone with modified etch properties. The dielectric material is then selectively etched into the modified zone from the direction of the narrow end of the tapered zone so that as the selective etching proceeds longitudinally into the modified zone, the progressively increasing width of the modified zone compensates for lateral etching occurring closer to the narrow end so as to produce steep-walled holes. The unetched portion of the modified zone produced by translating the laser beam close to and parallel to the bottom surface of the dielectric can serve as an optical waveguide to collect light from or deliver light to the etched channel which can contain various biological, optical, or chemical materials for sensing applications.
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