发明授权
US07033874B2 Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film
失效
形成绝缘膜的方法和制造包括用于形成第二绝缘膜的等离子体偏压的半导体器件的方法
- 专利标题： Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film
- 专利标题（中）： 形成绝缘膜的方法和制造包括用于形成第二绝缘膜的等离子体偏压的半导体器件的方法
-
申请号： US10863285申请日： 2004-06-09
-
公开(公告)号： US07033874B2公开(公告)日： 2006-04-25
- 发明人: Kazuichiro Itonaga , Akihiro Yamamoto , Hiroaki Nakaoka , Isao Miyanaga , Yoshinao Harada
- 申请人： Kazuichiro Itonaga , Akihiro Yamamoto , Hiroaki Nakaoka , Isao Miyanaga , Yoshinao Harada
- 申请人地址： JP Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon Peabody LLP
- 代理商 Donald R. Studebaker
- 优先权： JP11-261876 19990916
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L21/302 ; H01L21/461 ; H01L21/31
摘要：
With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected to the plasma. A semiconductor layer exposed on the wafer is oxidized into an oxide film. Thus, an oxide film can be formed even at room temperature differently from thermal oxidation. This oxidation is applicable to recovery of an implantation protection insulating film having been etched in cleaning a photoresist film, relaxation of a step formed between polysilicon films, relaxation of a step formed within a trench and the like. Also, before removing a photoresist film used for forming a gate electrode including a metal, a contamination protection film can be formed by this oxidation with the photoresist film kept.
公开/授权文献
信息查询
IPC分类:
