Invention Grant
US07033902B2 Method for making thin film transistors with lightly doped regions
失效
制造具有轻掺杂区域的薄膜晶体管的方法
- Patent Title: Method for making thin film transistors with lightly doped regions
- Patent Title (中): 制造具有轻掺杂区域的薄膜晶体管的方法
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Application No.: US10947210Application Date: 2004-09-23
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Publication No.: US07033902B2Publication Date: 2006-04-25
- Inventor: Shih-Chang Chang , De-Hua Deng , Yaw-Ming Tsai
- Applicant: Shih-Chang Chang , De-Hua Deng , Yaw-Ming Tsai
- Applicant Address: TW
- Assignee: Toppoly Optoelectronics Corp.
- Current Assignee: Toppoly Optoelectronics Corp.
- Current Assignee Address: TW
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L21/00 ; H01L21/84
Abstract:
A method for making a thin film transistor (TFT) with a lightly doped region. The process of the invention is compatible with the currently common TFT manufacturing processes. A substrate with a photoresist layer thereon is subjected to two-step exposure with different exposure energies to form a full-through pattern and a non-through pattern after development. The same photoresist layer is subjected to two etching steps to form a gate region and an intra-gate region. The gate region and the intra-gate region are respectively doped with different dopant concentrations. Therefore, the number of times forming and exposing the photoresist layer is reduced.
Public/Granted literature
- US20060063343A1 METHOD FOR MAKING THIN FILM TRANSISTORS WITH LIGHTLY DOPED REGIONS Public/Granted day:2006-03-23
Information query
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