- 专利标题: Apparatus and method for use in manufacturing a semiconductor device
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申请号: US10342011申请日: 2003-01-14
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公开(公告)号: US07033937B2公开(公告)日: 2006-04-25
- 发明人: Kazuyuki Toyoda , Osamu Kasahara , Tsutomu Tanaka , Mamoru Sueyoshi , Nobuhito Shima , Masanori Sakai
- 申请人: Kazuyuki Toyoda , Osamu Kasahara , Tsutomu Tanaka , Mamoru Sueyoshi , Nobuhito Shima , Masanori Sakai
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Kokusai Electric, Inc.
- 当前专利权人: Hitachi Kokusai Electric, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Katten Muchin Rosenman LLP
- 优先权: JP2000-093139 20000330
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/31
摘要:
An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.