发明授权
- 专利标题： Narrow body raised source/drain metal gate MOSFET
- 专利标题（中）： 窄体凸起源极/漏极金属栅极MOSFET
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申请号： US10653234申请日： 2003-09-03
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公开(公告)号： US07034361B1公开(公告)日： 2006-04-25
- 发明人: Bin Yu , Shibly S. Ahmed , Haihong Wang
- 申请人： Bin Yu , Shibly S. Ahmed , Haihong Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity Snyder LLP
- 主分类号： H01L27/01
- IPC分类号： H01L27/01
摘要：
A semiconductor device includes a fin, a source region formed adjacent the fin and having a height greater than that of the fin, and a drain region formed adjacent the a second side of the fin and having a height greater than that of the fin. A metal gate region is formed at a top surface and at least one side surface of the fin. A width of the source and drain region may be greater than that of the fin. The semiconductor device may exhibit a reduced series resistance and an improved transistor drive current.
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