发明授权
- 专利标题： Apparatus and method for staircase raised source/drain structure
- 专利标题（中）： 用于楼梯升高源/排水结构的装置和方法
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申请号： US10711080申请日： 2004-08-20
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公开(公告)号： US07037818B2公开(公告)日： 2006-05-02
- 发明人: Omer H. Dokumaci , Xinlin Wang , Huilong Zhu
- 申请人： Omer H. Dokumaci , Xinlin Wang , Huilong Zhu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Greenblum & Bernstein P.L.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
A structure, apparatus and method for improving the performance of semiconductor devices is provided. The semiconductor structure includes a raised source/drain region above a planar source/drain. The raised source/drain has at least a first step and a second step with a variety of transitions therebetween. The first step is of a prescribed height configured to optimize performance of the semiconductor device and is arranged next to a gate. The first step has a top surface above a lower surface of the gate. The second step is arranged next to the first step and has an upper surface raised above the upper surface of the first step. The raised source/drain is configured to reduce resistance with a minimal increase of gate capacitance. The raised source/drain may be fabricated in one deposition step.
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