发明授权
- 专利标题： Light-emitting device and method of fabricating the same
- 专利标题（中）： 发光元件及其制造方法
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申请号： US10690453申请日： 2003-10-22
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公开(公告)号： US07041529B2公开(公告)日： 2006-05-09
- 发明人: Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
- 申请人： Masato Yamada , Jun-ya Ishizaki , Nobuhiko Noto , Kazunori Hagimoto , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Shin-Etsu Handotai Co., Ltd.,Nanoteco Corporation
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.,Nanoteco Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Snider & Associates
- 代理商 Ronald R. Snider
- 优先权： JP2002-308956 20021023; JP2002-308970 20021023; JP2002-308989 20021023; JP2003-023480 20030131
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/30
摘要：
In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.
公开/授权文献
- US20040135166A1 Light-emitting device and method of fabricating the same 公开/授权日：2004-07-15
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