发明授权
US07041607B2 Method for fabricating crystalline-dielectric thin films and devices formed using same
失效
制造晶体电介质薄膜的方法和使用其形成的器件
- 专利标题： Method for fabricating crystalline-dielectric thin films and devices formed using same
- 专利标题（中）： 制造晶体电介质薄膜的方法和使用其形成的器件
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申请号： US10784593申请日： 2004-02-23
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公开(公告)号： US07041607B2公开(公告)日： 2006-05-09
- 发明人: Charles Black , Christopher Bruce Murray
- 申请人： Charles Black , Christopher Bruce Murray
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly, Bove, Lodge & Hutz, LLP
- 代理商 Wan Yee Cheung
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
This invention describes a new method for forming and depositing thin films of crystalline dielectric materials. The present technique uses chemical synthesis to control the granularity and thickness of the dielectric films. This method has several key advantages over existing technologies, and facilitates the integration of crystalline dielectric materials into high-density memory devices.
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